Catalog
60 V, 1 A NPN/PNP low VCEsat transistor
Description
AI
NPN/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
60 V, 1 A NPN/PNP low VCEsat transistor
60 V, 1 A NPN/PNP low VCEsat transistor
| Part | Mounting Type | Frequency - Transition | Grade | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector (Ic) (Max) [Max] | Package / Case | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Qualification | Transistor Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | 125 MHz 175 MHz | Automotive | 170 290 | 1 A | 6-UFDFN Exposed Pad | 370 mW | 100 nA | 60 V | 220 mV 340 mV | 6-HUSON (2x2) | AEC-Q101 | 1 NPN 1 PNP | 150 °C |