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SOT883
Discrete Semiconductor Products

PMZ370UNEZ

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Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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SOT883
Discrete Semiconductor Products

PMZ370UNEZ

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMZ370UNEZ
Current - Continuous Drain (Id) @ 25°C900 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]78 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-883, SC-101
Power Dissipation (Max)2.7 W
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs490 mOhm
Supplier Device PackageSOT-883
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1.05 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.09

Description

General part information

PMZ370UNE Series

30 V, N-channel Trench MOSFET