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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | 1.05 V | 490 mOhm | SC-101 SOT-883 | 8 V | 30 V | 900 mA | Surface Mount | 150 °C | -55 °C | 1.8 V | 4.5 V | SOT-883 | 2.7 W | 360 mW | 78 pF | 1.16 nC | N-Channel |