Discrete Semiconductor Products

SI4686DY-T1-GE3

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MOSFET N-CH 30V 18.2A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 30V 18.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4686DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	5.2 W, 3 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4686DY-T1-GE3	3 W 5.2 W	20 V	4.5 V 10 V	N-Channel	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	26 nC	18.2 A	8-SOIC	3.9 mm	0.154 in	1220 pF	3 V	30 V	-55 °C	150 °C

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General part information

N-Channel 30 V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC

Technical documentation and resources