SI4686 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 18.2A 8SO
| Part | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3 W 5.2 W | 20 V | 4.5 V 10 V | N-Channel | Surface Mount | 8-SOIC | MOSFET (Metal Oxide) | 26 nC | 18.2 A | 8-SOIC | 3.9 mm | 0.154 in | 1220 pF | 3 V | 30 V | -55 °C | 150 °C |