Discrete Semiconductor Products

WND10P08XQ

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DIODE GEN PURP 800V 10A TO220F

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Discrete Semiconductor Products

Active

DIODE GEN PURP 800V 10A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	WND10P08XQ

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-220F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Technology	Operating Temperature - Junction
WeEn Semiconductors WND10P08XQ	TO-220F	800 V	Through Hole	200 mA 500 ns	1.3 V	10 A	10 µA	TO-220-2 Full Pack Isolated Tab	Standard	150 ¯C
WeEn Semiconductors WND10P08YQ	IITO-220-2	800 V	Through Hole	200 mA 500 ns	1.3 V	10 A	10 µA	TO-220-2	Standard	150 ¯C
WeEn Semiconductors WND10M600XQ	TO-220F	600 V	Through Hole	200 mA 500 ns	980 mV	10 A	10 µA	TO-220-2 Full Pack Isolated Tab	Standard	150 ¯C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 10A Through Hole TO-220F

Technical documentation and resources

No documents available