Integrated Circuits (ICs)

IR2118SPBF

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INFINEON

IC GATE DRVR HIGH-SIDE 8SOIC

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Integrated Circuits (ICs)

IR2118SPBF

Active

INFINEON

IC GATE DRVR HIGH-SIDE 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2118SPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	250 mA
Current - Peak Output (Source, Sink) [custom]	500 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	9.5 V, 6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	40 ns
Rise / Fall Time (Typ) [custom]	80 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2118 Series

Part	Gate Type	Logic Voltage - VIL, VIH	Channel Type	Number of Drivers	Input Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Mounting Type	Package / Case	Package / Case
INFINEON IR2118PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	600 V	8-PDIP	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Through Hole
INFINEON IR2118	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	600 V	8-PDIP	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Through Hole
INFINEON IR2118STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON 98-0231	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON IR2118STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON IR2118SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1470	$ 1.98
	Tube	1	$ 2.17
		10	$ 1.95
		95	$ 1.57
		285	$ 1.47
		570	$ 1.29
		1045	$ 1.07
		2565	$ 0.99
		5035	$ 0.96

Description

General part information

IR2118 Series

High-Side Gate Driver IC Inverting 8-SOIC

Documents

Technical documentation and resources