IR2118 Series

Manufacturer: INFINEON

Catalog

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

Part	Gate Type	Logic Voltage - VIL, VIH	Channel Type	Number of Drivers	Input Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Mounting Type	Package / Case	Package / Case
INFINEON IR2118PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	600 V	8-PDIP	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Through Hole
INFINEON IR2118	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	600 V	8-PDIP	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Through Hole
INFINEON IR2118STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON 98-0231	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON IR2118STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm
INFINEON IR2118SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	6 V 9.5 V	Single	1	Inverting	8-SOIC	-40 °C	150 °C	600 V	8-SOIC	20 V	10 VDC	250 mA	500 mA	High-Side	40 ns	80 ns	Surface Mount	0.154 in	3.9 mm