STW45NM50
ActiveMOSFET TRANSISTOR, N CHANNEL, 45 A, 550 V, 100 MOHM, 10 V, 4 V ROHS COMPLIANT: YES
STW45NM50
ActiveMOSFET TRANSISTOR, N CHANNEL, 45 A, 550 V, 100 MOHM, 10 V, 4 V ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STW45NM50 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 45 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 417 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW45NM50 Series
This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources