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PMXB75UPEZ
Discrete Semiconductor Products

PMXB75UPEZ

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Nexperia USA Inc.

TRANS MOSFET P-CH 20V 2.9A 3-PIN DFN-D EP T/R

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PMXB75UPEZ
Discrete Semiconductor Products

PMXB75UPEZ

Active
Nexperia USA Inc.

TRANS MOSFET P-CH 20V 2.9A 3-PIN DFN-D EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMXB75UPEZ
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds608 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XDFN Exposed Pad
Power Dissipation (Max)317 mW
Power Dissipation (Max)8.33 W
Rds On (Max) @ Id, Vgs85 mOhm
Supplier Device PackageDFN1010D-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.52

Description

General part information

PMXB75UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.