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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | -55 °C | Surface Mount | 20 V | 1.2 V | 4.5 V | 3-XDFN Exposed Pad | 2.9 A | 85 mOhm | MOSFET (Metal Oxide) | DFN1010D-3 | 12 nC | P-Channel | 1 V | 8 V | 608 pF | 317 mW | 8.33 W |