Specification	PMV130ENEAR

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	460 mW, 5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMV130ENEA Series

40 V, N-channel Trench MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Qualification	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Grade	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Nexperia USA Inc. PMV130ENEAR	TO-236AB	170 pF	Surface Mount	AEC-Q101	20 V	150 °C	-55 °C	4.5 V 10 V	MOSFET (Metal Oxide)	120 mOhm	SC-59 SOT-23-3 TO-236-3	3.6 nC	Automotive	2.1 A	N-Channel	40 V	2.5 V	5 W 460 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.50

Description

General part information

PMV130ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.