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40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Qualification | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Grade | Current - Continuous Drain (Id) @ 25°C | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 170 pF | Surface Mount | AEC-Q101 | 20 V | 150 °C | -55 °C | 4.5 V 10 V | MOSFET (Metal Oxide) | 120 mOhm | SC-59 SOT-23-3 TO-236-3 | 3.6 nC | Automotive | 2.1 A | N-Channel | 40 V | 2.5 V | 5 W 460 mW |