IRF2807PBF
NRNDPOWER MOSFET, N CHANNEL, 75 V, 82 A, 0.013 OHM, TO-220AB, THROUGH HOLE
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IRF2807PBF
NRNDPOWER MOSFET, N CHANNEL, 75 V, 82 A, 0.013 OHM, TO-220AB, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF2807PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 82 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3820 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 230 W |
| Rds On (Max) @ Id, Vgs | 13 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF2807 Series
The IRF2807PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
