TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRF2807ZSTRLPBF

LTB

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 9.4 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF2807ZSTRLPBF

LTB

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 9.4 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF2807ZSTRLPBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF2807 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs(th) (Max) @ Id
INFINEON IRF2807STRLPBF	160 nC	20 V	3820 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	82 A	Surface Mount	230 W	13 mOhm	D2PAK	10 V	75 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V
INFINEON IRF2807ZSTRLPBF	110 nC	20 V	3270 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	Surface Mount	170 W	9.4 mOhm	D2PAK	10 V	75 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V
INFINEON IRF2807STRRPBF	160 nC	20 V	3820 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	82 A	Surface Mount	230 W	13 mOhm	D2PAK	10 V	75 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V
INFINEON IRF2807PBF	160 nC	20 V	3820 pF	N-Channel	TO-220-3	82 A	Through Hole	230 W	13 mOhm	TO-220AB	10 V	75 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.10
		10	$ 2.02
		100	$ 1.40
	Digi-Reel®	1	$ 3.10
		10	$ 2.02
		100	$ 1.40
	N/A	0	$ 1.06
	Tape & Reel (TR)	800	$ 1.07
		1600	$ 1.00
		2400	$ 0.99

Description

General part information

IRF2807 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources