Discrete Semiconductor Products

SQM40022E_GE3

LTB

MOSFET N-CH 40V 150A TO263

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Discrete Semiconductor Products

LTB

MOSFET N-CH 40V 150A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM40022E_GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	9200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	1.63 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs (Max)	Qualification	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQM40022E_GE3	150 A	9200 pF	N-Channel	150 W	20 V	AEC-Q101	3.5 V	160 nC	1.63 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	Automotive	40 V
Vishay General Semiconductor - Diodes Division SQM40022EM_GE3	150 A	9200 pF	N-Channel	150 W	20 V	AEC-Q101	3.5 V	160 nC	1.63 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-263-7	Surface Mount	D2PAK TO-263-7	10 V	Automotive	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 150A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources