Discrete Semiconductor Products

ES6U2T2R

Obsolete

MOSFET N-CH 20V 1.5A 6WEMT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.5A 6WEMT

Technical Specifications

Parameters and characteristics for this part

Specification	ES6U2T2R

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	6-WEMT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Rohm Semiconductor ES6U2T2R	1.5 A	1.5 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	20 V	6-WEMT	1.8 nC	700 mW	6-SMD Flat Leads	Surface Mount	1 V	150 °C	180 mOhm	Schottky Diode (Isolated)	110 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT

Technical documentation and resources

No documents available