ES6U2 Series
Manufacturer: Rohm Semiconductor
MOSFET N-CH 20V 1.5A 6WEMT
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature | Rds On (Max) @ Id, Vgs | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1.5 A | 1.5 V 4.5 V | N-Channel | MOSFET (Metal Oxide) | 20 V | 6-WEMT | 1.8 nC | 700 mW | 6-SMD Flat Leads | Surface Mount | 1 V | 150 °C | 180 mOhm | Schottky Diode (Isolated) | 110 pF | 10 V |