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Technical Specifications

Parameters and characteristics for this part

SpecificationBUK6D20-40EX
Current - Continuous Drain (Id) @ 25°C8 A, 19 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]582 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)2.3 W, 15 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2122$ 0.88

Description

General part information

BUK6D20-40E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.