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40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Qualification | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Grade | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 4.5 V 10 V | 40 V | 2.3 W 15 W | DFN2020MD-6 | 20 mOhm | 6-UDFN Exposed Pad | 582 pF | 20 V | 8 A 19 A | 175 °C | -55 °C | MOSFET (Metal Oxide) | AEC-Q101 | 2.7 V | Surface Mount | 19 nC | Automotive | N-Channel |