STB32NM50N
ActiveN-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN D2PAK PACKAGE
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STB32NM50N
ActiveN-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB32NM50N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1973 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB32NM50N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Technical documentation and resources