Specification	FDB0170N607L

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	243 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	19250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	250 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]	1.4 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB0170N607L Series

N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 300A, 1.4mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)
ON Semiconductor FDB0170N607L	10 V	Surface Mount	-55 °C	175 ░C	N-Channel	D2PAK TO-263-7	4 V	TO-263-7	60 V	243 nC	3.8 W 250 W	300 A	1.4 mOhm	19250 pF	MOSFET (Metal Oxide)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.18
		10	$ 3.45
		100	$ 2.46
	Digi-Reel®	1	$ 5.18
		10	$ 3.45
		100	$ 2.46
	Tape & Reel (TR)	800	$ 1.98
Newark	Each	500	$ 2.11
ON Semiconductor	N/A	1	$ 2.11

Description

General part information

FDB0170N607L Series

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.