FDB0170N607L Series

N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)
ON Semiconductor FDB0170N607L	10 V	Surface Mount	-55 °C	175 ░C	N-Channel	D2PAK TO-263-7	4 V	TO-263-7	60 V	243 nC	3.8 W 250 W	300 A	1.4 mOhm	19250 pF	MOSFET (Metal Oxide)	20 V

Catalog

N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ

Key Features

• Max rDS(on)= 1.4 mΩ at VGS= 10 V, ID= 39 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.