Discrete Semiconductor Products

STP6N95K5

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STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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DocumentsSTP6N95K5 | Datasheet +16

Discrete Semiconductor Products

STP6N95K5

Active

STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsSTP6N95K5 | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP6N95K5

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STP6N95K5 Series

N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STP6N95K5	30 V	N-Channel	9 A	90 W	5 V	1.25 Ohm	MOSFET (Metal Oxide)	950 V	TO-220-3	13 nC	Through Hole	TO-220	150 °C	-55 °C	10 V	450 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	494	$ 1.28
Newark	Each	1	$ 2.51
		10	$ 1.77
		100	$ 1.65
		500	$ 1.57
		1000	$ 1.51
		3000	$ 1.49

Description

General part information

STP6N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.