Discrete Semiconductor Products

PMXB65ENEZ

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MOSFET N-CH 30V 3.2A DFN1010D-3

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Documentsplastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body +12

Discrete Semiconductor Products

PMXB65ENEZ

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Nexperia USA Inc.

MOSFET N-CH 30V 3.2A DFN1010D-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMXB65ENEZ

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	295 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XDFN Exposed Pad
Power Dissipation (Max)	8.33 W
Power Dissipation (Max)	400 mW
Rds On (Max) @ Id, Vgs	67 mOhm
Supplier Device Package	DFN1010D-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMXB65ENE Series

30 V, N-channel Trench MOSFET

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PMXB65ENEZ	Surface Mount	150 °C	-55 °C	295 pF	3-XDFN Exposed Pad	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	11 nC	DFN1010D-3	N-Channel	67 mOhm	8.33 W	400 mW	2.5 V	3.2 A	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.73
		75475	$ 0.73
		10083339	$ 0.28

Description

General part information

PMXB65ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.