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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 150 °C | -55 °C | 295 pF | 3-XDFN Exposed Pad | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 11 nC | DFN1010D-3 | N-Channel | 67 mOhm | 8.33 W | 400 mW | 2.5 V | 3.2 A | 30 V |