Discrete Semiconductor Products

APT15GP60BDQ1G

Active

IGBT PT MOS 7 COMBI 600 V 15 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

IGBT PT MOS 7 COMBI 600 V 15 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT15GP60BDQ1G

Current - Collector (Ic) (Max) [Max]	56 A
Current - Collector Pulsed (Icm)	65 A
Gate Charge	55 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Supplier Device Package	TO-247 [B]
Switching Energy	130 µJ, 120 µJ
Td (on/off) @ 25°C	8 ns, 29 ns
Test Condition	15 A, 400 V, 5 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Gate Charge	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	Test Condition	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Package / Case	IGBT Type
Microchip Technology APT15GP60BDQ1G	TO-247 [B]	2.7 V	55 nC	Through Hole	250 W	8 ns 29 ns	5 Ohm 15 A 15 V 400 V	120 µJ 130 µJ	600 V	-55 °C	150 °C	65 A	56 A	TO-247-3	PT
Microchip Technology APT15GP60BG	TO-247 [B]	2.7 V	55 nC	Through Hole	250 W	8 ns 29 ns	5 Ohm 15 A 15 V 400 V	121 µJ 130 µJ	600 V	-55 °C	150 °C	65 A	56 A	TO-247-3	PT

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General part information

Low Conduction Loss

100 kHz operation @ 400V, 19A

Low Gate Charge

Technical documentation and resources