NGW75T65H3DFPQ
Active650 V, 75 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Deep-Dive with AI
Search across all available documentation for this part.
NGW75T65H3DFPQ
Active650 V, 75 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGW75T65H3DFPQ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 124 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 502 W |
| Reverse Recovery Time (trr) | 122 ns |
| Supplier Device Package | TO-247-3L |
| Switching Energy | 2.94 mJ, 950 µJ |
| Td (on/off) @ 25°C [custom] | 30 ns |
| Td (on/off) @ 25°C [custom] | 130 ns |
| Test Condition | 10 Ohm, 400 V, 75 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 237 | $ 8.03 | |
Description
General part information
NGW75T65H3DFP Series
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Documents
Technical documentation and resources