Specification	MJD42C-QJ

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	1.6 W
Qualification	AEC-Q100
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD42C-Q Series

100 V, 6 A PNP high power bipolar transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Grade	Package / Case	Transistor Type	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Nexperia USA Inc. MJD42C-QJ	30	3 MHz	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	PNP	150 °C	DPAK	1 µA	1.6 W	100 V	AEC-Q100	Surface Mount	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1156	$ 1.04

General part information

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources