
Catalog
100 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

100 V, 6 A PNP high power bipolar transistor
100 V, 6 A PNP high power bipolar transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Grade | Package / Case | Transistor Type | Operating Temperature | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | Mounting Type | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 30 | 3 MHz | Automotive | DPAK (2 Leads + Tab) SC-63 TO-252-3 | PNP | 150 °C | DPAK | 1 µA | 1.6 W | 100 V | AEC-Q100 | Surface Mount | 1.5 V |