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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB80N04S4L04ATMA1

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INFINEON

IPB80N04S4L-04 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4 MΩ MAX, D2PAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMPERATURE, ROHS COMPLIANT.

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB80N04S4L04ATMA1

Active
INFINEON

IPB80N04S4L-04 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4 MΩ MAX, D2PAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMPERATURE, ROHS COMPLIANT.

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB80N04S4L04ATMA1
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]4690 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)71 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V
Vgs (Max) [Min]-16 V
Vgs(th) (Max) @ Id2.2 V
PartPower Dissipation (Max)QualificationTechnologyMounting TypeSupplier Device PackageVgs(th) (Max) @ IdRds On (Max) @ Id, VgsFET TypeInput Capacitance (Ciss) (Max) @ Vds [Max]Drive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Vgs (Max)Gate Charge (Qg) (Max) @ Vgs [Max]GradePackage / CaseOperating Temperature [Max]Operating Temperature [Min]Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsVgs (Max) [Min]Vgs (Max) [Max]Vgs(th) (Max) @ Id [Max]
79 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
2.2 V
6.4 mOhm
N-Channel
5680 pF
4.5 V
10 V
60 V
16 V
75 nC
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
107 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4 V
5.4 mOhm
N-Channel
10 V
60 V
20 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
6500 pF
81 nC
190 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
8.8 mOhm
N-Channel
2360 pF
10 V
55 V
20 V
80 nC
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
300 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4 V
4.8 mOhm
N-Channel
10 V
55 V
20 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
5110 pF
170 nC
71 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
2.2 V
4 mOhm
N-Channel
4690 pF
4.5 V
10 V
40 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
60 nC
-16 V
20 V
94 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
2.2 V
3.3 mOhm
N-Channel
5100 pF
4.5 V
10 V
30 V
16 V
75 nC
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
79 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4 V
7.1 mOhm
N-Channel
4500 pF
10 V
60 V
20 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
56 nC
215 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4 V
7.7 mOhm
N-Channel
2860 pF
10 V
55 V
20 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
96 nC
115 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4.5 mOhm
N-Channel
10 V
40 V
20 V
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
3900 pF
60 nC
4 V
300 W
AEC-Q101
MOSFET (Metal Oxide)
Surface Mount
PG-TO263-3-2
4 V
3.7 mOhm
N-Channel
10 V
40 V
20 V
148 nC
Automotive
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 °C
-55 °C
4400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.06
10$ 1.99
100$ 1.38
500$ 1.12
Digi-Reel® 1$ 3.06
10$ 1.99
100$ 1.38
500$ 1.12
N/A 659$ 2.32
Tape & Reel (TR) 1000$ 0.97
NewarkEach (Supplied on Cut Tape) 1$ 2.67
10$ 1.83
25$ 1.67
50$ 1.51
100$ 1.35
250$ 1.25
500$ 1.15

Description

General part information

IPB80N Series

N-Channel 40 V 80A (Tc) 71W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources