TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IPB80N04S3H4ATMA1

Obsolete

INFINEON

MOSFET N-CH 40V 80A TO263-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IPB80N04S3H4ATMA1

Obsolete

INFINEON

MOSFET N-CH 40V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80N04S3H4ATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	115 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

IPB80N Series

Part	Power Dissipation (Max)	Qualification	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPB80N06S4L07ATMA1	79 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	2.2 V	6.4 mOhm	N-Channel	5680 pF	4.5 V 10 V	60 V	16 V	75 nC	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C
INFINEON IPB80N06S405ATMA1	107 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	4 V	5.4 mOhm	N-Channel		10 V	60 V	20 V		Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	6500 pF	81 nC
INFINEON IPB80N06S209ATMA2	190 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2		8.8 mOhm	N-Channel	2360 pF	10 V	55 V	20 V	80 nC	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C
INFINEON IPB80N06S205ATMA1	300 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	4 V	4.8 mOhm	N-Channel		10 V	55 V	20 V		Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	5110 pF	170 nC
INFINEON IPB80N04S4L04ATMA1	71 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	2.2 V	4 mOhm	N-Channel	4690 pF	4.5 V 10 V	40 V			Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C		60 nC	-16 V	20 V
INFINEON IPB80N03S4L03ATMA1	94 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	2.2 V	3.3 mOhm	N-Channel	5100 pF	4.5 V 10 V	30 V	16 V	75 nC	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C
INFINEON IPB80N06S407ATMA1	79 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	4 V	7.1 mOhm	N-Channel	4500 pF	10 V	60 V	20 V		Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C		56 nC
INFINEON IPB80N06S208ATMA1	215 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	4 V	7.7 mOhm	N-Channel	2860 pF	10 V	55 V	20 V		Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C		96 nC
INFINEON IPB80N04S3H4ATMA1	115 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2		4.5 mOhm	N-Channel		10 V	40 V	20 V		Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	3900 pF	60 nC			4 V
INFINEON IPB80N04S2H4ATMA2	300 W	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	PG-TO263-3-2	4 V	3.7 mOhm	N-Channel		10 V	40 V	20 V	148 nC	Automotive	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	4400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
		13200	$ 0.00

Description

General part information

IPB80N Series

N-Channel 40 V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources