Discrete Semiconductor Products
NX3020NAKS-QX
ActiveNexperia USA Inc.
30 V, DUAL N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
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Discrete Semiconductor Products
NX3020NAKS-QX
ActiveNexperia USA Inc.
30 V, DUAL N-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NX3020NAKS-QX |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 220 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 pC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 9 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max | 1.3 W, 270 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Supplier Device Package | 6-TSSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.26 | |
Description
General part information
NX3020NAKS-Q Series
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources