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30 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, dual N-channel Trench MOSFET
30 V, dual N-channel Trench MOSFET
| Part | Qualification | Grade | Rds On (Max) @ Id, Vgs | Power - Max | Mounting Type | Drain to Source Voltage (Vdss) | Configuration | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | AEC-Q101 | Automotive | 3 Ohm | 1.3 W 270 mW | Surface Mount | 30 V | 2 N-Channel (Dual) | 6-TSSOP | 175 °C | -55 °C | 6-TSSOP SC-88 SOT-363 | 315 pC | MOSFET (Metal Oxide) | 220 mA | 9 pF | 1.5 V |