Discrete Semiconductor Products

IRLI630GPBF

LTB

MOSFET N-CH 200V 6.2A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 200V 6.2A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLI630GPBF

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	FET Type	Power Dissipation (Max) [Max]	Package / Case
Vishay General Semiconductor - Diodes Division IRLI630GPBF	10 V	TO-220-3	4 V 5 V	6.2 A	40 nC	2 V	Through Hole	1100 pF	200 V	-55 °C	150 °C	400 mOhm	MOSFET (Metal Oxide)	N-Channel	35 W	TO-220-3 Full Pack Isolated Tab

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General part information

N-Channel 200 V 6.2A (Tc) 35W (Tc) Through Hole TO-220-3

Technical documentation and resources