IRLI630 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 6.2A TO220-3
| Part | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Technology | FET Type | Power Dissipation (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | TO-220-3 | 4 V 5 V | 6.2 A | 40 nC | 2 V | Through Hole | 1100 pF | 200 V | -55 °C | 150 °C | 400 mOhm | MOSFET (Metal Oxide) | N-Channel | 35 W | TO-220-3 Full Pack Isolated Tab |