Discrete Semiconductor Products

SI7810DN-T1-E3

LTB

MOSFET N-CH 100V 3.4A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 3.4A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7810DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	62 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Technology	Mounting Type	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7810DN-T1-E3	PowerPAK® 1212-8	4.5 V	-55 °C	150 °C	1.5 W	N-Channel	MOSFET (Metal Oxide)	Surface Mount	20 V	PowerPAK® 1212-8	6 V 10 V	3.4 A	62 mOhm	100 V	17 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources