Discrete Semiconductor Products

SI7810DN-T1-E3

LTB

MOSFET N-CH 100V 3.4A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 3.4A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7810DN-T1-E3

Current - Continuous Drain (Id) (Ta)	3.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	62 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Vgs (Max)	Rds On (Max)	Vgs(th) (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI7810DN-T1-E3	20 V	62 mOhm	4.5 V	N-Channel	6 V	10 V	17 nC	MOSFET (Metal Oxide)	100 V	PowerPAK® 1212-8	PowerPAK® 1212-8	1.5 W	3.4 A	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 2.06	1m+
		10	$ 1.32
		100	$ 0.89
		500	$ 0.71
		1000	$ 0.65
	Digi-Reel®	1	$ 2.06	1m+
		10	$ 1.32
		100	$ 0.89
		500	$ 0.71
		1000	$ 0.65
	N/A	8777	$ 2.30	1m+
	Tape & Reel (TR)	3000	$ 0.58	1m+
		6000	$ 0.54

3D models and CAD resources for this part

General part information

N-Channel 100 V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources