SI7810 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 3.4A PPAK1212-8
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | FET Type | Technology | Mounting Type | Vgs (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 4.5 V | -55 °C | 150 °C | 1.5 W | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 20 V | PowerPAK® 1212-8 | 6 V 10 V | 3.4 A | 62 mOhm | 100 V | 17 nC |