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MMBD1401ALT1G
Discrete Semiconductor Products

NDS7002A-F169

Obsolete
ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.28A, 5Ω

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MMBD1401ALT1G
Discrete Semiconductor Products

NDS7002A-F169

Obsolete
ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.28A, 5Ω

Technical Specifications

Parameters and characteristics for this part

SpecificationNDS7002A-F169
Current - Continuous Drain (Id) @ 25°C280 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)300 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NDS7002A Series

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.