
NDS7002A-F169
ObsoleteN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.28A, 5Ω
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NDS7002A-F169
ObsoleteN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.28A, 5Ω
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Technical Specifications
Parameters and characteristics for this part
| Specification | NDS7002A-F169 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 280 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 300 mW |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NDS7002A Series
This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Documents
Technical documentation and resources