NDS7002A Series

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

Part	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]
ON Semiconductor NDS7002A-F169	N-Channel	60 V	300 mW	280 mA	2 Ohm	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	150 °C	-65 °C	20 V	50 pF	10 V	5 V	2.5 V	MOSFET (Metal Oxide)
ON Semiconductor NDS7002A	N-Channel	60 V		280 mA	2 Ohm	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	150 °C	-65 °C	20 V	50 pF	10 V	5 V	2.5 V	MOSFET (Metal Oxide)	300 mW

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

Key Features

• High density cell design for extremely low RDS(ON).

• Voltage controlled small signal switch.

• Rugged and Reliable.

• High saturation current capability.

Description

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.