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JANTXV2N5666
Discrete Semiconductor Products

JANTXV2N5666

Unknown
Microchip Technology

200V 1.2A 5W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES

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JANTXV2N5666
Discrete Semiconductor Products

JANTXV2N5666

Unknown
Microchip Technology

200V 1.2A 5W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5666
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)200 nA
DC Current Gain (hFE) (Min)40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-5-3 Metal Can, TO-205AA
Package NameTO-5
Power - Max1.2 VA
QualificationMIL-PRF-19500, 455
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 100$ 26.52<1d
Microchip DirectN/A 1$ 21.0330d+
NewarkEach 100$ 19.5330d+
500$ 18.78

CAD

3D models and CAD resources for this part

Description

General part information

JANTXV2N5666-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.