Specification	SSM6P35AFU,LF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature [Max]	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	42 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6P35 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Package / Case	FET Feature	FET Feature [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	FET Feature
Toshiba Semiconductor and Storage SSM6P35AFU,LF	285 mW	1.4 Ohm	6-TSSOP SC-88 SOT-363	1.2 V	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	20 V	2 P-Channel (Dual)	42 pF	250 mA	US6	1 V	150 °C
Toshiba Semiconductor and Storage SSM6P35AFE,LF	150 mW	1.4 Ohm	SOT-563 SOT-666	1.2 V	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	20 V	2 P-Channel (Dual)	42 pF	250 mA	ES6	1 V	150 °C
Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)		8 Ohm	SOT-563 SOT-666			Surface Mount	MOSFET (Metal Oxide)	20 V	2 P-Channel (Dual)	12.2 pF	100 mA	ES6	1 V	150 °C	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources