High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch x 2 MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, SOT-563(ES6)
| Part | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Package / Case | FET Feature | FET Feature [Max] | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 285 mW | 1.4 Ohm | 6-TSSOP SC-88 SOT-363 | 1.2 V | Logic Level Gate | Surface Mount | MOSFET (Metal Oxide) | 20 V | 2 P-Channel (Dual) | 42 pF | 250 mA | US6 | 1 V | 150 °C | |
 Toshiba Semiconductor and Storage | 150 mW | 1.4 Ohm | SOT-563 SOT-666 | 1.2 V | Logic Level Gate | Surface Mount | MOSFET (Metal Oxide) | 20 V | 2 P-Channel (Dual) | 42 pF | 250 mA | ES6 | 1 V | 150 °C | |
 Toshiba Semiconductor and Storage | 8 Ohm | SOT-563 SOT-666 | Surface Mount | MOSFET (Metal Oxide) | 20 V | 2 P-Channel (Dual) | 12.2 pF | 100 mA | ES6 | 1 V | 150 °C | Logic Level Gate |