Discrete Semiconductor Products
CSD18502KCS
ActiveTexas Instruments
40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 2.9 MOHM
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Discrete Semiconductor Products
CSD18502KCS
ActiveTexas Instruments
40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE TO-220, 2.9 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD18502KCS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4680 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 259 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.9 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.42 | |
| 50 | $ 1.94 | |||
| 100 | $ 1.60 | |||
| 500 | $ 1.35 | |||
| 1000 | $ 1.15 | |||
| 2000 | $ 1.09 | |||
| 5000 | $ 1.05 | |||
| Newark | Each | 1 | $ 3.14 | |
| 10 | $ 2.90 | |||
| 25 | $ 2.71 | |||
| 50 | $ 2.59 | |||
| 100 | $ 2.43 | |||
| 250 | $ 2.32 | |||
| 500 | $ 2.28 | |||
| Texas Instruments | TUBE | 1 | $ 1.82 | |
| 100 | $ 1.50 | |||
| 250 | $ 1.08 | |||
| 1000 | $ 0.81 | |||
Description
General part information
CSD18502Q5B Series
This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources
