CSD18502Q5B Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]
Texas Instruments CSD18502KCS	TO-220-3	Through Hole	100 A	4680 pF	20 V	N-Channel	2.9 mOhm	62 nC	40 V	TO-220-3	4.5 V 10 V	-55 °C	175 ░C	259 W	2.1 V	MOSFET (Metal Oxide)
Texas Instruments CSD18502Q5BT	8-VSON-CLIP (5x6)	Surface Mount	100 A	5070 pF	20 V	N-Channel			40 V	8-PowerTDFN	4.5 V 10 V	-55 °C	150 °C			MOSFET (Metal Oxide)	2.3 mOhm	33 nC	3.2 W 156 W	2.2 V

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb-Free Terminal PlatingRoHS CompliantHalogen-FreeSON 5 mm × 6 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb-Free Terminal PlatingRoHS CompliantHalogen-FreeSON 5 mm × 6 mm Plastic Package

Description

This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.