Discrete Semiconductor Products

FDWS5360L-F085

Obsolete

N-CHANNEL POWER TRENCH® MOSFET 60V, 60A, 8.5MΩ

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Discrete Semiconductor Products

Obsolete

N-CHANNEL POWER TRENCH® MOSFET 60V, 60A, 8.5MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDWS5360L-F085

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3695 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	8.5 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ

Part	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology
ON Semiconductor FDWS5360L-F085	Automotive	Power56	3 V	-55 °C	175 ░C	4.5 V 10 V	8.5 mOhm	60 A	AEC-Q101	N-Channel	72 nC	60 V	8-PowerVDFN	150 W	Surface Mount	3695 pF	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel Power Trench®MOSFET 60 V, 60 A, 8.5 mΩ

Technical documentation and resources