Discrete Semiconductor Products

STU80N4F6

Obsolete

MOSFET N-CH 40V 80A TO251

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 80A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	STU80N4F6

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Technology	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Supplier Device Package	Drain to Source Voltage (Vdss)
STMicroelectronics STU80N4F6	20 V	175 °C	-55 °C	36 nC	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	6.3 mOhm	MOSFET (Metal Oxide)	N-Channel	4 V	70 W	10 V	IPAK	TO-251	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources