Integrated Circuits (ICs)

MT53E1G64D4NZ-046 WT:C

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Micron Technology Inc.

IC DRAM 64GBIT PAR 376WFBGA

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Integrated Circuits (ICs)

MT53E1G64D4NZ-046 WT:C

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Micron Technology Inc.

IC DRAM 64GBIT PAR 376WFBGA

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E1G64D4NZ-046 WT:C

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	1 G
Memory Size	8 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Package / Case	376-WFBGA
Supplier Device Package	376-WFBGA (14x14)
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E1G64 Series

Part	Clock Frequency	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Technology	Write Cycle Time - Word, Page	Memory Organization	Package / Case	Access Time	Memory Interface	Memory Type	Memory Format	Memory Size	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Grade	Qualification	Voltage - Supply
Micron Technology Inc. MT53E1G64D4NZ-046 WT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G	376-WFBGA	3.5 ns	Parallel	Volatile	DRAM	8 MB	-25 °C	85 °C	376-WFBGA (14x14)
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 AUT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	125 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4HJ-046 AAT:C TR	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	105 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4SQ-046 WT:A TR	2.133 GHz				SDRAM - Mobile LPDDR4		1 G				Volatile	DRAM	8 MB	-30 °C	85 °C						1.1 V
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A TR	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 WT:A	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	95 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C TR	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	95 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1190	$ 46.89
	N/A	0	$ 111.01

Description

General part information

MT53E1G64 Series

SDRAM - Mobile LPDDR4X Memory IC 64Gbit Parallel 2.133 GHz 3.5 ns 376-WFBGA (14x14)

Documents

Technical documentation and resources

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