MT53E1G64 Series

Catalog

IC DRAM 64GBIT PAR 376WFBGA

Part	Clock Frequency	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Technology	Write Cycle Time - Word, Page	Memory Organization	Package / Case	Access Time	Memory Interface	Memory Type	Memory Format	Memory Size	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Grade	Qualification	Voltage - Supply
Micron Technology Inc. MT53E1G64D4NZ-046 WT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G	376-WFBGA	3.5 ns	Parallel	Volatile	DRAM	8 MB	-25 °C	85 °C	376-WFBGA (14x14)
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 AUT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	125 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4HJ-046 AAT:C TR	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	105 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4SQ-046 WT:A TR	2.133 GHz				SDRAM - Mobile LPDDR4		1 G				Volatile	DRAM	8 MB	-30 °C	85 °C						1.1 V
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A TR	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 WT:A	2.133 GHz				SDRAM - Mobile LPDDR4X		1 G			Parallel		DRAM	8 MB			556-WFBGA	12.4	12.4
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	95 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C TR	2.133 GHz	Surface Mount	1.06 V	1.17 V	SDRAM - Mobile LPDDR4X	18 ns	1 G		3.5 ns	Parallel	Volatile	DRAM	8 MB	-40 °C	95 °C	556-WFBGA	12.4	12.4	Automotive	AEC-Q100