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Texas Instruments-CSD87502Q2T MOSFETs Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Discrete Semiconductor Products

CSD87502Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SON 2 MM X 2, 42 MOHM, GATE ESD PROTECTION

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Texas Instruments-CSD87502Q2T MOSFETs Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
Discrete Semiconductor Products

CSD87502Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SON 2 MM X 2, 42 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD87502Q2T
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)30 V
FET Feature5V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds353 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power - Max [Max]2.3 W
Rds On (Max) @ Id, Vgs32.4 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 1.06
25$ 1.01
100$ 0.83
Digi-Reel® 1$ 1.19
10$ 1.06
25$ 1.01
100$ 0.83
Tape & Reel (TR) 250$ 0.77
500$ 0.68
1250$ 0.54
2500$ 0.50
6250$ 0.48
12500$ 0.46
Texas InstrumentsSMALL T&R 1$ 1.02
100$ 0.69
250$ 0.54
1000$ 0.36

Description

General part information

CSD87502Q2 Series

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.